HYB39S16400AT-8 dram equivalent, 16 mbit synchronous dram.
cation flexibility, a CAS latency, a burst length, and a burst sequence can be progr.
VDD VSS VDDQ VSSQ
NC
Semiconductor Group
2
1998-10-01
HYB 39S16400/800/160AT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM
VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C. N.C. WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 .
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